Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holder

Nanowires are a promising structure to create new defect-free heterostructures and optoelectronic devices. GaP nanowires grown via the VLS mechanism using tertiary-butyl phosphine (TBP) trimethylgallium (TMGa) as precursors in an situ closed gas cell heating holder shown. This is model system investigate processes metal-organic vapour phase epitaxy (MOVPE). change their growth direction after random distances by producing kinks. Statistics of these kink angles show dominant values around 70.5°, 109.5°, 123.7°. A custom tip capable holding single chip used perform scanning precession electron diffraction (SPED) measurements on nanowire The results that predominant result from micro twins first second order. Understanding defect formation resulting geometry changes can lead increased control over shape during mark huge step toward applicable